FDB86135
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 100V, 75A, 3.5mR, TO-263, Tape & Reel
Дополнительная информация
N-Channel MOSFET, 100V Vds, 3.5mΩ Rds On, 75A Continuous Drain Current. Features Shielded Gate PowerTrench® technology, 227W max power dissipation, and 175°C max operating temperature. Surface mount TO-263-3 package, RoHS compliant, supplied on 800-piece tape and reel. Includes 11ns fall time, 22ns turn-on delay, and 37ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | PowerTrench® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.5mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 7.295nF |
| Power Dissipation | 227W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 37ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
