FDB8860
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N-Channel MOSFET, 30V, 80A, 1.9mR, TO-263AB, SMT
Дополнительная информация
N-Channel Logic Level MOSFET, 30V Vdss, 80A continuous drain current, and 2.6mΩ low Rds(on). This single-element transistor features a TO-263AB surface mount package, 254W max power dissipation, and operates from -55°C to 175°C. Ideal for power switching applications, it offers fast switching speeds with turn-on delay of 14ns and fall time of 49ns. Packaged on an 800-piece tape and reel, this RoHS compliant component is designed for high efficiency.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 11.33mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | PowerTrench® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 49ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| Package/Case | TO-263AB |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 12.585nF |
| Power Dissipation | 254W |
| Threshold Voltage | 1.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 79ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 254W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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