FDB8896

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FDB8896 - Onsemi
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Краткое описание: N-Ch MOSFET, 30V, 93A, 5.7mR, TO-263AB, SMT
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 30V Drain-Source Breakdown Voltage, 93A Continuous Drain Current, and 5.7mΩ Max Drain-Source On-Resistance. This surface-mount component features a TO-263AB package, 80W Max Power Dissipation, and operates within a temperature range of -55°C to 175°C. It includes a 2.5V Threshold Voltage and is supplied on an 800-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Weight 1.31247g
Polarity N-CHANNEL
Fall Time 44ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5.7mR
Package/Case TO-263AB
Current Rating 93A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 800
Input Capacitance 2.525nF
Power Dissipation 80W
Threshold Voltage 2.5V
Number of Elements 1
Turn-On Delay Time 9ns
Turn-Off Delay Time 58ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 80W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 93A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 5.7MR
Drain to Source Breakdown Voltage 30V

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