FDC5614P

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FDC5614P - Onsemi
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Краткое описание: P-Channel JFET, 60V, -3A, 105mR, SOT-23-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerTrench® MOSFET, logic-level, featuring a 60V drain-source breakdown voltage and a continuous drain current of 3A. This surface-mount component offers a low drain-source on-resistance of 105mΩ at a nominal gate-source voltage of -1.6V. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. The SOT-23-6 package is supplied on a 3000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Current 2A
Voltage 60V
Polarity P-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 105mR
Nominal Vgs -1.6V
Package/Case SOT-23-6
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 3000
Input Capacitance 759pF
Power Dissipation 1.6W
Threshold Voltage -1.6V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 105mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 105MR
Drain to Source Breakdown Voltage -60V

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