FDC638APZ

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FDC638APZ - Onsemi
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Краткое описание: P-Channel MOSFET, -20V, -4.5A, 43mΩ, SOT-23-6
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel MOSFET, SOT-23-6 package, featuring -20V Drain-Source Breakdown Voltage and 4.5A Continuous Drain Current. Offers a maximum On-Resistance of 43mΩ at 2.5V specified gate-source voltage. Designed for surface mounting with a 1.6W maximum power dissipation and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 6ns turn-on delay and 20ns fall time.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Weight 0.036g
Polarity P-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 43mR
Termination SMD/SMT
Package/Case SOT-23-6
Current Rating -4.5A
RoHS Compliant Yes
DC Rated Voltage -12V
Package Quantity 1
Input Capacitance 1nF
Power Dissipation 1.6W
Threshold Voltage -800mV
Number of Elements 1
Turn-On Delay Time 6ns
Dual Supply Voltage -20V
Turn-Off Delay Time 48ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 43MR
Drain to Source Breakdown Voltage -20V

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