FDC655BN

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FDC655BN - Onsemi
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Краткое описание: N-Ch MOSFET, 30V, 6.3A, 25mR, SOT-23-6, Logic Level
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, logic level, featuring 30V drain-source breakdown voltage and a continuous drain current of 6.3A. Offers a low 25mΩ drain-source on-resistance. This surface-mount component, packaged in SOT-23-6, operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.6W. Includes fast switching characteristics with a 4ns fall time.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Weight 0.036g
Polarity N-CHANNEL
Fall Time 4ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 25mR
Nominal Vgs 1.9V
Package/Case SOT-23-6
Current Rating 6.3A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 3000
Input Capacitance 570pF
Power Dissipation 1.6W
Threshold Voltage 1.9V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 6ns
Turn-Off Delay Time 15ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 25mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.3A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 25MR
Drain to Source Breakdown Voltage 30V

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