FDC6561AN

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FDC6561AN - Onsemi
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Краткое описание: Dual N-Ch JFET, 30V, 2.5A, 95mR, SOT-23-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-Channel PowerTrench® MOSFET, logic level, 30V drain-source breakdown voltage, 2.5A continuous drain current, and 95mΩ maximum drain-source on-resistance. This surface mount component features a SOT-23-6 package, 1.8V nominal gate-source voltage, and a maximum power dissipation of 960mW. Operating temperature range is -55°C to 150°C, with typical turn-on delay of 6ns and turn-off delay of 12ns.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Current 24A
Voltage 30V
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 95mR
Nominal Vgs 1.8V
Package/Case SOT-23-6
Current Rating 2.5A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1
Input Capacitance 220pF
Power Dissipation 900mW
Number of Elements 2
Turn-On Delay Time 6ns
Dual Supply Voltage 30V
Turn-Off Delay Time 12ns
Reach SVHC Compliant No
Max Power Dissipation 960mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 95mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 95mR
Drain to Source Breakdown Voltage 30V

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