FDC8602

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FDC8602 - Onsemi
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Краткое описание: Dual N-Ch JFET 100V 1.2A 350mR SOT-23-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-Channel PowerTrench® MOSFET, 100V Drain to Source Breakdown Voltage, 1.2A Continuous Drain Current, and 350mΩ Rds On Max. This surface mount component features a SOT-23-6 package, 2 N-Channel FETs, and a 100V Drain to Source Voltage (Vdss). Key switching characteristics include a 3.5ns Turn-On Delay Time and a 2.3ns Fall Time. Operating across a temperature range of -55°C to 150°C, it offers 690mW Max Power Dissipation and is RoHS Compliant.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Weight 0.036g
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 2.3ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 350mR
Package/Case SOT-23-6
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 70pF
Power Dissipation 690mW
Turn-On Delay Time 3.5ns
Radiation Hardening No
Turn-Off Delay Time 5.4ns
Element Configuration Dual
Max Power Dissipation 690mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 350mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.2A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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