FDD10N20LZTM
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Краткое описание:
N-Channel Power MOSFET, 200V, 7.6A, 360mΩ, DPAK, Logic Level
Дополнительная информация
N-Channel Power MOSFET, Logic Level, UniFET™ series, featuring 200V drain-source breakdown voltage and 7.6A continuous drain current. This surface-mount device in a DPAK package offers a low 360mΩ Rds On, with fast switching speeds including 10ns turn-on delay and 25ns fall time. Maximum power dissipation is 83W, operating across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | UniFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Packaging | Tape and Reel |
| Rds On Max | 360mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 585pF |
| Power Dissipation | 56W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Element Configuration | Single |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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