FDD13AN06A0

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FDD13AN06A0 - Onsemi
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Краткое описание: N-Ch MOSFET 60V 50A 13mΩ TO-252AA SMD
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel PowerTrench® MOSFET, surface mount, featuring 60V drain-source breakdown voltage and 50A continuous drain current. Offers low 13mΩ drain-source resistance at a nominal 4V gate-source voltage. Designed for high efficiency with a maximum power dissipation of 115W and operating temperature up to 175°C. Packaged in TO-252AA on a 2500-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series PowerTrench®
Weight 0.26037g
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 13.5mR
Nominal Vgs 4V
Termination SMD/SMT
Package/Case TO-252AA
Current Rating 9.9A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 2500
Input Capacitance 1.35nF
Power Dissipation 115W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 9ns
Dual Supply Voltage 60V
Radiation Hardening No
Turn-Off Delay Time 26ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 115W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 11.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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