FDD1600N10ALZ
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Краткое описание:
N-Ch MOSFET 100V 6.8A 160mR TO-252-3 SMT
Дополнительная информация
N-Channel PowerTrench® MOSFET, a single-element junction field-effect transistor designed for surface mounting in a TO-252-3 package. Features a 100V drain-to-source breakdown voltage and a continuous drain current of 6.8A. Offers a low on-resistance of 160mΩ at a 10V gate-to-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 14.9W. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 14ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | PowerTrench® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 225pF |
| Power Dissipation | 14.9W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 13ns |
| Element Configuration | Single |
| Max Power Dissipation | 14.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 175mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
