FDD18N20LZ
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N-Channel MOSFET, 200V, 16A, 125mR, DPAK, Logic Level
Дополнительная информация
N-Channel Power MOSFET, UniFET™ series, designed for logic-level gate drive. Features 200V drain-source breakdown voltage and 16A continuous drain current. Offers a maximum drain-source on-resistance of 125mΩ. Packaged in a DPAK surface-mount package, with dimensions of 6.73mm length, 6.22mm width, and 2.39mm height. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 89W. Supplied on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | UniFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.575nF |
| Power Dissipation | 89W |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 135ns |
| Element Configuration | Single |
| Max Power Dissipation | 89W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 125MR |
| Drain to Source Breakdown Voltage | 200V |
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