FDD2670
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Краткое описание:
N-Channel MOSFET 200V 3.6A 130mR TO-252 SMT
Дополнительная информация
N-Channel MOSFET, 200V Drain-Source Breakdown Voltage, 3.6A Continuous Drain Current, 130mΩ Drain-Source Resistance. Features a 20V Gate-Source Voltage, 1.3W Max Power Dissipation, and operates from -55°C to 150°C. Surface mount TO-252 package, 2500 units per tape and reel. RoHS compliant with 13ns turn-on and 30ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | PowerTrench® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 130mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-252 |
| Current Rating | 3.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 1.228nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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