FDD5353
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Краткое описание:
N-Channel MOSFET, 60V, 11.5A, 12.3mR, TO-252, SMT
Дополнительная информация
N-Channel Power Trench® MOSFET, 60V Vds, 12.3mΩ Rds On Max, and 50A pulsed drain current. This single-element transistor features a TO-252 package for surface mounting, with a continuous drain current of 11.5A and a maximum power dissipation of 69W. Operating temperature range is -55°C to 150°C, with a nominal Vgs of 1.8V and a threshold voltage of 1.8V. RoHS compliant and lead-free, it offers fast switching with a 4ns fall time and 11ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | PowerTrench® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12.3mR |
| Nominal Vgs | 1.8V |
| Package/Case | TO-252 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.215nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 69W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 12.3MR |
| Drain to Source Breakdown Voltage | 60V |
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