FDD5690
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Краткое описание:
60V N-Ch MOSFET, 30A, 27mΩ, TO-252, SMT
Дополнительная информация
N-Channel PowerTrench® MOSFET, a single-element surface mount device in a TO-252 package. Features 60V drain-source breakdown voltage, 30A continuous drain current, and a maximum drain-source on-resistance of 27mΩ at a nominal Vgs of 2.5V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 50W. Includes 10ns turn-on delay and 24ns turn-off delay times, with 1.11nF input capacitance. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | PowerTrench® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | TO-252 |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.11nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 27MR |
| Drain to Source Breakdown Voltage | 60V |
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