FDD5N60NZTM
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Краткое описание:
N-CH MOSFET 600V 4A DPAK TO-252 SMT Power Transistor
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 4A continuous drain current. This single-element device utilizes UniFET II process technology and is housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads. Key specifications include a maximum gate threshold voltage of 5V, 2000mOhm drain-source resistance at 10V, and a maximum power dissipation of 83W. Operating temperature range is -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Process Technology | UniFET II |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.39(Max) |
| Package Length (mm) | 6.73(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 83000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 10nC |
| Typical Gate Charge @ Vgs | 10@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 2000@10VmOhm |
| Typical Input Capacitance @ Vds | 450@25VpF |
| Maximum Continuous Drain Current | 4A |
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