FDD6N50TM
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Краткое описание:
500V 6A N-Channel Power MOSFET, DPAK, 900mR RdsOn
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 6A continuous drain current. This UniFET™ series component offers a maximum drain-source on-resistance of 900mΩ. Designed for surface mounting in a DPAK package, it boasts a maximum power dissipation of 89W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 6ns turn-on delay and 35ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | UniFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 9.4nF |
| Power Dissipation | 89W |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Element Configuration | Single |
| Max Power Dissipation | 89W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 760mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 900mR |
| Drain to Source Breakdown Voltage | 500V |
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