FDD6N50TM-F085
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Краткое описание:
500V N-Ch MOSFET 6A 0.9Ω TO-252 DPAK Surface Mount
Дополнительная информация
N-Channel MOSFET, 500V Drain to Source Breakdown Voltage, 6A Continuous Drain Current, 0.9 Ohm Max Drain to Source Resistance. Features a TO-252-3 (DPAK) surface mount package, 89W max power dissipation, and 150°C max operating temperature. Includes 35ns fall time, 25ns turn-off delay, and 6ns turn-on delay. Input capacitance is 9.4nF with a 30V gate to source voltage rating. Supplied on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101 |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 9.4nF |
| Power Dissipation | 89W |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Element Configuration | Single |
| Max Power Dissipation | 89W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 760mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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