FDD7N25LZTM
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N-Channel MOSFET, 250V, 6.2A, 550mΩ, DPAK, SM
Дополнительная информация
N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 6.2A continuous drain current. Offers a maximum drain-source on-resistance of 550mΩ at a 10V gate-source voltage. This surface-mount device, packaged in DPAK, operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 56W. Includes fast switching characteristics with a 10ns turn-on delay and 30ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | UniFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 635pF |
| Power Dissipation | 56W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Element Configuration | Single |
| Max Power Dissipation | 56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 430mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 550MR |
| Drain to Source Breakdown Voltage | 250V |
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