FDD8424H

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FDD8424H - Onsemi
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Краткое описание: Dual N/P-Ch MOSFET, 40V, 9A, 24mR, TO-252, SMT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N & P-Channel MOSFET, 40V Drain to Source Breakdown Voltage, 24mR Max Drain-Source On Resistance. Features 9A Continuous Drain Current, 3.1W Max Power Dissipation, and 1.7V Threshold Voltage. Packaged in TO-252 for surface mounting, this RoHS compliant component operates from -55°C to 150°C. Includes 7ns Turn-On Delay and 20ns Turn-Off Delay.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series PowerTrench®
Weight 0.26037g
FET Type N and P-Channel
Polarity P-CHANNEL
Fall Time 3ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 24mR
Package/Case TO-252
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1nF
Power Dissipation 3.1W
Threshold Voltage 1.7V
Number of Elements 2
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Reach SVHC Compliant No
Max Power Dissipation 3.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 24MR
Drain to Source Breakdown Voltage 40V

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