FDD8444

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FDD8444 - Onsemi
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Краткое описание: N-Ch MOSFET, 40V, 50A, 5.2mR, TO-252, SMT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 40V Drain-Source Voltage, 5.2mΩ Max Drain-Source On Resistance, and 50A Continuous Drain Current. Features a 153W Max Power Dissipation, 175°C Max Operating Temperature, and a TO-252 surface mount package. Includes 12ns Turn-On Delay Time, 48ns Turn-Off Delay Time, and 51ns Reverse Recovery Time. RoHS compliant and Lead Free.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series PowerTrench®
Current 50A
Voltage 40V
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5.2mR
Nominal Vgs 2.5V
Termination SMD/SMT
Package/Case TO-252
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 6.195nF
Power Dissipation 153W
Threshold Voltage 2.5V
Turn-On Delay Time 12ns
Dual Supply Voltage 40V
Radiation Hardening No
Turn-Off Delay Time 48ns
Reach SVHC Compliant No
Max Power Dissipation 153W
Reverse Recovery Time 51ns
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 145A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 5.2MR
Drain to Source Breakdown Voltage 40V