FDD86110
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Краткое описание:
N-Channel MOSFET, 100V, 10.2mR Rds On, 12.5A ID, TO-252
Дополнительная информация
N-Channel MOSFET, 100V Drain-Source Breakdown Voltage, 50A Continuous Drain Current, 10.2mΩ Drain-Source Resistance. Features Shielded Gate PowerTrench® technology, single element configuration, and TO-252 package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 127W. Supplied on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | PowerTrench® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 3.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10.2mR |
| Nominal Vgs | 2.8V |
| Package/Case | TO-252 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.265nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 2.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 127W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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