FDD86113LZ
Производится
Увеличить
Краткое описание:
N-Channel MOSFET 100V 4.2A 104mR DPAK
Дополнительная информация
N-Channel MOSFET, 100V Drain to Source Breakdown Voltage, 4.2A Continuous Drain Current, 104mΩ Drain to Source Resistance. Features Shielded Gate PowerTrench® technology, DPAK surface mount package, and 3.1W maximum power dissipation. Operates from -55°C to 150°C, with fast switching characteristics including 3.6ns turn-on delay and 1.6ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | PowerTrench® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 1.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 104mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 285pF |
| Power Dissipation | 3.1W |
| Turn-On Delay Time | 3.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.7ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 104mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
