FDD86326

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FDD86326 - Onsemi
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Краткое описание: N-Channel MOSFET 80V 37A 23mR TO-252 SMT
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 80V Drain-Source Voltage, 37A Continuous Drain Current, 23mΩ Drain-Source Resistance. Features Shielded Gate PowerTrench® technology, 62W Max Power Dissipation, and a TO-252 surface mount package. Operates from -55°C to 150°C, with 7.6ns turn-on delay and 2.9ns fall time. Supplied in 2500-piece tape and reel packaging.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series PowerTrench®
Weight 0.26037g
Polarity N-CHANNEL
Fall Time 2.9ns
Packaging Tape and Reel
Rds On Max 23mR
Nominal Vgs 3.1V
Package/Case TO-252
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1.035nF
Power Dissipation 62W
Threshold Voltage 3.1V
Turn-On Delay Time 7.6ns
Radiation Hardening No
Turn-Off Delay Time 13.4ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 62W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 23mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 37A
Drain to Source Voltage (Vdss) 80V
Drain to Source Breakdown Voltage 80V

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