FDD8880

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FDD8880 - Onsemi
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Краткое описание: 30V 58A 9mR N-CH MOSFET DPAK, Surface Mount
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET featuring 30V drain-source breakdown voltage and a continuous drain current of 58A. This surface-mount device offers a low drain-source on-resistance of 9mΩ. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 55W. The component is packaged in a DPAK for tape and reel distribution, with a threshold voltage of 2.5V and input capacitance of 1.26nF.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series PowerTrench®
Weight 0.26037g
Polarity N-CHANNEL
Fall Time 32ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 9mR
Package/Case DPAK
Current Rating 58A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1
Input Capacitance 1.26nF
Power Dissipation 55W
Threshold Voltage 2.5V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 8ns
Turn-Off Delay Time 38ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 55W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 58A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 9MR
Drain to Source Breakdown Voltage 30V

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