FDG6308P
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Краткое описание:
Dual P-Channel JFET -20V, -600mA, 400mR, SC Package
Дополнительная информация
Dual P-Channel MOSFET, Surface Mount, featuring -20V Drain to Source Breakdown Voltage and 400mΩ Drain-Source On Resistance. This component offers a continuous drain current of 600mA and a gate-to-source voltage of 8V. With a 153pF input capacitance and fast switching times (5ns turn-on, 7ns turn-off, 15ns fall time), it is designed for efficient power management. Operating from -55°C to 150°C, this RoHS compliant device is packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | PowerTrench® |
| Weight | 0.028g |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 400mR |
| Package/Case | SC |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 153pF |
| Power Dissipation | 300mW |
| Number of Elements | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7ns |
| Element Configuration | Dual |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 400MR |
| Drain to Source Breakdown Voltage | -20V |
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