FDG6316P

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FDG6316P - Onsemi
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Краткое описание: P-Channel MOSFET, Dual, -12V, 700mA, 270mR, SC, Tape & Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel MOSFET, dual element configuration, designed for 1.8V operation. Features a -12V drain-source breakdown voltage and a continuous drain current of 700mA. Offers a low drain-source on-resistance of 270mΩ. Packaged in SC, surface mount, tape and reel for 3000 units. Operates from -55°C to 150°C with 300mW power dissipation.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series PowerTrench®
Weight 0.028g
Polarity P-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 270mR
Package/Case SC
Current Rating -700mA
RoHS Compliant Yes
DC Rated Voltage -12V
Package Quantity 3000
Input Capacitance 146pF
Power Dissipation 300mW
Threshold Voltage -600mV
Number of Elements 2
Turn-On Delay Time 5ns
Radiation Hardening No
Turn-Off Delay Time 8ns
Reach SVHC Compliant No
Element Configuration Dual
Max Power Dissipation 300mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 270mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 700mA
Drain to Source Voltage (Vdss) 12V
Drain-source On Resistance-Max 270MR
Drain to Source Breakdown Voltage -12V

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