FDH44N50
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Краткое описание:
500V 44A N-Ch MOSFET, 120mR, TO-247
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 44A continuous drain current. This single-element transistor offers a low 120mΩ drain-source on-resistance and a maximum power dissipation of 750W. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 16ns turn-on delay and 45ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.82mm |
| Height | 20.82mm |
| Length | 15.87mm |
| Weight | 6.39g |
| Polarity | N-CHANNEL |
| Fall Time | 79ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 120mR |
| Nominal Vgs | 3.15V |
| Termination | Through Hole |
| Package/Case | TO-247 |
| Current Rating | 44A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 150 |
| Input Capacitance | 5.335nF |
| Power Dissipation | 750W |
| Threshold Voltage | 3.15V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 500V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 750W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 120mR |
| Drain to Source Breakdown Voltage | 500V |
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