FDI150N10
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Краткое описание:
N-CH Power MOSFET 100V 57A TO-262
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 57A continuous drain current. This single-element transistor is housed in a TO-262 package with a 3-pin through-hole configuration and a tab. Key specifications include a maximum drain-source on-resistance of 16 mOhm at 10V, typical gate charge of 53 nC, and typical input capacitance of 3580 pF at 25V. Maximum power dissipation is 110W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-262AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 5V1P1 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-262 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | I2PAK |
| Package Height (mm) | 9.65(Max) |
| Package Length (mm) | 10.29(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 11.05(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 53nC |
| Typical Gate Charge @ Vgs | 53@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Input Capacitance @ Vds | 3580@25VpF |
| Maximum Continuous Drain Current | 57A |
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