FDL100N50F
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Краткое описание:
N-Channel MOSFET, 500V, 100A, 55mΩ, TO-264
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 100A continuous drain current. This single-element device offers a low 55mΩ drain-source resistance and a maximum power dissipation of 2.5kW. Designed for through-hole mounting in a TO-264 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 63ns turn-on delay and 105ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20mm |
| Length | 20mm |
| Series | UniFET™ |
| Weight | 6.756g |
| Polarity | N-CHANNEL |
| Fall Time | 105ns |
| Packaging | Rail/Tube |
| Rds On Max | 55mR |
| Package/Case | TO-264 |
| RoHS Compliant | Yes |
| Package Quantity | 25 |
| Input Capacitance | 12nF |
| Power Dissipation | 2.5kW |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 63ns |
| Turn-Off Delay Time | 202ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5kW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 43mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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