FDMA3027PZ

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FDMA3027PZ - Onsemi
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Краткое описание: P-CH MOSFET 30V 3.3A WDFN EP 6-Pin SMT
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel enhancement mode power MOSFET, featuring a 30V drain-source voltage and 3.3A continuous drain current. This dual MOSFET is housed in a compact 2x2mm WDFN EP package with a 0.65mm pin pitch, suitable for surface mounting. Key specifications include a maximum gate-source voltage of ±25V, a low 3V gate threshold voltage, and a maximum drain-source on-resistance of 87mOhm at 10V. The component offers typical gate charge of 7.2nC at 10V and input capacitance of 324pF at 15V, with a maximum power dissipation of 1400mW.
PCB 6
ECCN EAR99
PPAP No
Jedec MO-229VCCC
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 5V1P1
Pin Count 6
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case WDFN EP
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2
Process Technology TMOS
Package Description Very Very Thin Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.75
Package Length (mm) 2
Seated Plane Height (mm) 0.78
Max Operating Temperature 150°C
Maximum Power Dissipation 1400mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 7.2nC
Typical Gate Charge @ Vgs 7.2@10V|4.1@5VnC
Typical Output Capacitance 59pF
Maximum Gate Source Voltage ±25V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 3V
Maximum Drain Source Resistance 87@10VmOhm
Typical Input Capacitance @ Vds 324@15VpF
Maximum Continuous Drain Current 3.3A

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