N-Channel UltraFET Power MOSFET featuring 55V drain-source breakdown voltage and 15A continuous drain current. This single MOSFET offers a low 75mΩ drain-to-source resistance and 35W maximum power dissipation. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. Key switching parameters include a 9.5ns turn-on delay and 22ns fall time.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
3.3mm |
| Height |
0.5mm |
| Length |
3.3mm |
| Weight |
0.2g |
| Polarity |
N-CHANNEL |
| Fall Time |
22ns |
| Packaging |
Tape and Reel |
| Rds On Max |
900mR |
| RoHS Compliant |
Yes |
| Package Quantity |
1 |
| Input Capacitance |
350pF |
| Power Dissipation |
35W |
| Turn-On Delay Time |
9.5ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
22.5ns |
| Element Configuration |
Single |
| Max Power Dissipation |
35W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
75mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
15A |
| Drain to Source Voltage (Vdss) |
55V |
| Drain to Source Breakdown Voltage |
55V |