N-Channel MOSFET, 200V Drain-Source Breakdown Voltage, 200mΩ Max Drain-Source On Resistance. Features 9.5A Current Rating, 2.2A Continuous Drain Current, and 20V Gate-to-Source Voltage. Surface mount component with 1.6ns fall time and 29ns turn-off delay. Operates from -55°C to 150°C with 2.1W power dissipation.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
3mm |
| Height |
0.95mm |
| Length |
3mm |
| Series |
UniFET™ |
| Weight |
0.16533333g |
| Polarity |
N-CHANNEL |
| Fall Time |
16ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
200mR |
| Current Rating |
9.5A |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
220V |
| Package Quantity |
1 |
| Input Capacitance |
960pF |
| Power Dissipation |
2.1W |
| Number of Elements |
1 |
| Turn-On Delay Time |
17ns |
| Turn-Off Delay Time |
29ns |
| Element Configuration |
Single |
| Max Power Dissipation |
2.1W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
200mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
2.2A |
| Drain to Source Voltage (Vdss) |
200V |
| Drain-source On Resistance-Max |
200MR |
| Drain to Source Breakdown Voltage |
200V |