FDMC2610

Производится
FDMC2610 - Onsemi
Увеличить
Краткое описание: N-Ch MOSFET 200V 9.5A 200mR Surface Mount
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 200V Drain-Source Breakdown Voltage, 200mΩ Max Drain-Source On Resistance. Features 9.5A Current Rating, 2.2A Continuous Drain Current, and 20V Gate-to-Source Voltage. Surface mount component with 1.6ns fall time and 29ns turn-off delay. Operates from -55°C to 150°C with 2.1W power dissipation.
RoHS Compliant
Mount Surface Mount
Width 3mm
Height 0.95mm
Length 3mm
Series UniFET™
Weight 0.16533333g
Polarity N-CHANNEL
Fall Time 16ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 200mR
Current Rating 9.5A
RoHS Compliant Yes
DC Rated Voltage 220V
Package Quantity 1
Input Capacitance 960pF
Power Dissipation 2.1W
Number of Elements 1
Turn-On Delay Time 17ns
Turn-Off Delay Time 29ns
Element Configuration Single
Max Power Dissipation 2.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 200mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.2A
Drain to Source Voltage (Vdss) 200V
Drain-source On Resistance-Max 200MR
Drain to Source Breakdown Voltage 200V