FDMC6675BZ
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Краткое описание:
P-Channel MOSFET, -30V, 9.5A, 14.4mR, Surface Mount
Дополнительная информация
P-Channel Power Trench® MOSFET featuring a -30V drain-source breakdown voltage and 14.4mΩ maximum drain-source on-resistance. This single-element transistor offers a continuous drain current of 9.5A and a maximum power dissipation of 36W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 11ns and fall time of 26ns. The component is RoHS compliant and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 0.75mm |
| Length | 3.3mm |
| Series | PowerTrench® |
| Weight | 0.2g |
| Polarity | P-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14.4mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.865nF |
| Power Dissipation | 2.3W |
| Threshold Voltage | -1.9V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 44ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 36W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14.4mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 14.4MR |
| Drain to Source Breakdown Voltage | -30V |
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