FDME1034CZT

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FDME1034CZT - Onsemi
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Краткое описание: Dual N/P-CH MOSFET 20V 3.8A/2.6A UDFN EP SMT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N/P-channel enhancement mode power MOSFETs designed for surface mounting. Features a 20V drain-source voltage rating and a 6-pin UDFN EP package with an exposed pad, measuring 1.6x1.6x0.5mm. Offers a maximum continuous drain current of 3.8A for the N-channel and 2.6A for the P-channel. Key specifications include a low gate threshold voltage of 1V and low on-resistance, with typical values of 66mOhm (N-channel) and 142mOhm (P-channel) at 4.5V Vgs. Operating temperature range is -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 5V1P1
Pin Count 6
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N|P
Package/Case UDFN EP
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 1.6
Process Technology TMOS
Package Description Micro Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.5(Max)
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.55(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1400mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs [email protected]@N Channel|[email protected]@P ChannelnC
Maximum Gate Source Voltage ±8V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Gate Threshold Voltage 1V
Maximum Drain Source Resistance [email protected]@N Channel|[email protected]@P ChannelmOhm
Typical Input Capacitance @ Vds 225@10V@N Channel|305@10V@P ChannelpF
Maximum Continuous Drain Current 3.8@N Channel|2.6@P ChannelA

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