FDMQ8203
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Краткое описание:
Dual N/P-Channel MOSFET, 80V, 2.6A, 161mR, Surface Mount
Дополнительная информация
Dual N-Channel and Dual P-Channel MOSFETs, designed for high-efficiency bridge rectification. Features 80V drain-to-source breakdown voltage and 2.6A continuous drain current. Offers low on-resistance with Rds On Max of 110mR. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact 5mm x 4.5mm x 0.75mm surface-mount package, supplied on a 3000-piece tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.5mm |
| Height | 0.75mm |
| Length | 5mm |
| Series | GreenBridge™ PowerTrench® |
| Weight | 0.21g |
| FET Type | 2 N and 2 P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 2.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 110mR |
| Nominal Vgs | 3V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 210pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 3V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 161mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain to Source Breakdown Voltage | -80V |
