FDMS3602S

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FDMS3602S - Onsemi
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Краткое описание: 25V 26A 5.6mR Asymmetric Dual N-Channel MOSFET, Surface Mount
Производитель Onsemi
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

Asymmetric dual N-channel MOSFET power stage, 25V Vds, 26A continuous drain current, and 5.6mΩ maximum drain-source on-resistance. Features include 1.68nF input capacitance, 3.2ns fall time, and 31ns turn-off delay. Operates from -55°C to 150°C with 2.5W power dissipation. Surface mountable in a 5mm x 6mm x 1.05mm package, supplied on tape and reel. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 6mm
Height 1.05mm
Length 5mm
Series PowerTrench®
Weight 0.09g
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 3.2ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5.6mR
Nominal Vgs 1.8V
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.68nF
Power Dissipation 2.5W
Radiation Hardening No
Turn-Off Delay Time 31ns
Reach SVHC Compliant No
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 26A
Drain to Source Voltage (Vdss) 25V
Drain-source On Resistance-Max 5.6MR
Drain to Source Breakdown Voltage 25V

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