FDMS5672
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Краткое описание:
60V 22A N-Ch MOSFET, 11.5mR RdsOn, UltraFET Trench, SMD
Дополнительная информация
N-Channel UltraFET Trench MOSFET, 60V drain-source breakdown voltage, 11.5mΩ drain-source on-resistance, and 22A current rating. This single-element MOSFET features a 2.5W maximum power dissipation, 10.6A continuous drain current, and a 3.2V threshold voltage. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. Key electrical characteristics include 8ns fall time, 16ns turn-on delay, and 22ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 0.75mm |
| Length | 5mm |
| Series | UltraFET™ |
| Weight | 0.231g |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11.5mR |
| Nominal Vgs | 3.2V |
| Termination | SMD/SMT |
| Current Rating | 22A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 2.8nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 3.2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 11.5MR |
| Drain to Source Breakdown Voltage | 60V |
