FDMS6673BZ

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FDMS6673BZ - Onsemi
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Краткое описание: P-Channel MOSFET -30V, 6.8mR, 15.2A, Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel MOSFET, single element configuration, offering a -30V drain-to-source breakdown voltage and 6.8mΩ drain-to-source resistance. Features a continuous drain current of 15.2A and a maximum power dissipation of 73W. Operates within a temperature range of -55°C to 150°C, with a threshold voltage of -1.8V. This surface mount component is packaged in tape and reel, is RoHS compliant, and utilizes PowerTrench® technology.
RoHS Compliant
Mount Surface Mount
Width 6mm
Height 1.05mm
Length 5mm
Series PowerTrench®
Weight 0.0681g
Polarity P-CHANNEL
Fall Time 79ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6.8mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 5.915nF
Power Dissipation 2.5W
Threshold Voltage -1.8V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 97ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 73W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6.8mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 15.2A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage -30V

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