FDMS7600AS
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Краткое описание:
N-CH MOSFET, 30V, 12A/22A, DFN EP, 8-Pin, Dual
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 12A/22A continuous drain current. This dual MOSFET utilizes TMOS process technology and is housed in an 8-pin DFN EP package with exposed pad, measuring 5x6x0.5mm. Key specifications include a 3V gate threshold voltage and typical gate charge values of 20nC (Q1) and 81nC (Q2) at 10V. Maximum power dissipation reaches 2200mW (Q1) and 2500mW (Q2), with an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DFN EP |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 6 |
| Process Technology | TMOS |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.5 |
| Package Length (mm) | 5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2200@Q 1|2500@Q 2mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 20@Q 1|81@Q 2nC |
| Typical Gate Charge @ Vgs | 20@10V|[email protected]@Q 1|81@10V|[email protected]@Q 2nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 3V |
| Typical Input Capacitance @ Vds | 1315@15V@Q 1|5265@15V@Q 2pF |
| Maximum Continuous Drain Current | 12@Q 1|22@Q 2A |
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