FDMS7678

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FDMS7678 - Onsemi
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Краткое описание: N-Channel MOSFET 30V 17.5A 5.5mR Surface Mount
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power Trench® MOSFET, 30V Drain to Source Breakdown Voltage, 5.5mΩ Drain to Source Resistance, and 17.5A Continuous Drain Current. This single MOSFET features a 1.5V nominal Gate to Source Voltage and 1.5V threshold voltage. Designed for surface mount applications, it offers a maximum power dissipation of 41W and operates within a temperature range of -55°C to 150°C. Packaged on a 3000-piece tape and reel, this RoHS compliant component has a 2.41nF input capacitance and fast switching times with a 10ns turn-on delay and 3ns fall time.
RoHS Compliant
Mount Surface Mount
Width 6.25mm
Height 1.05mm
Length 5.1mm
Series PowerTrench®
Weight 0.074g
Polarity N-CHANNEL
Fall Time 3ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5.5mR
Nominal Vgs 1.5V
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 2.41nF
Power Dissipation 41W
Threshold Voltage 1.5V
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 26ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 41W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17.5A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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