FDMS8622
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Краткое описание:
N-Channel MOSFET 100V 4.8A 45mR Surface Mount
Дополнительная информация
N-Channel Power Trench® MOSFET, 100V Drain to Source Voltage (Vdss), 4.8A Continuous Drain Current (ID), and 56mΩ Rds On Max. This single-element, surface-mount transistor features a 2.5W maximum power dissipation and operates across a temperature range of -55°C to 150°C. With a 100V drain to source breakdown voltage and 45mΩ drain to source resistance, it offers fast switching characteristics with a 2.1ns fall time. Packaged in a tape and reel for 3000 units, this RoHS compliant component is ideal for power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 1.05mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.074g |
| Polarity | N-CHANNEL |
| Fall Time | 2.1ns |
| Packaging | Tape and Reel |
| Rds On Max | 56mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 400pF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10.2ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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