FDMS86252

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FDMS86252 - Onsemi
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Краткое описание: 150V 16A N-CH MOSFET 51mR QFN EP
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 150V Drain-Source Breakdown Voltage, 16A Continuous Drain Current, 51mΩ Max Drain-Source Resistance. Features PowerTrench® technology, 69W Max Power Dissipation, and a 2.8V Threshold Voltage. Surface mountable in a QFN EP package, operating from -55°C to 150°C. Includes 3.2ns Fall Time and 15ns Turn-Off Delay Time.
RoHS Compliant
Mount Surface Mount
Width 6mm
Height 1.05mm
Length 5mm
Series PowerTrench®
Weight 0.074g
Polarity N-CHANNEL
Fall Time 3.2ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 51mR
Package/Case QFN EP
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 905pF
Power Dissipation 69W
Threshold Voltage 2.8V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 7.7ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 69W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 51mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 150V
Drain to Source Breakdown Voltage 150V

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