FDMS86500DC
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Краткое описание:
N-Ch MOSFET 60V 2.3mR 108A Dual Cool PowerTrench SM
Дополнительная информация
N-Channel MOSFET, Dual CoolTM 56 Power Trench® technology, 60V Drain to Source Breakdown Voltage, 2.3mΩ Drain to Source Resistance (Rds On Max). Features 29A Continuous Drain Current (ID), 125W Power Dissipation, and a maximum operating temperature of 150°C. This surface mount component offers fast switching with turn-on delay of 35ns and fall time of 8.2ns. Packaged in tape and reel, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.85mm |
| Height | 1.05mm |
| Length | 5.1mm |
| Series | Dual Cool™, PowerTrench® |
| Weight | 0.09g |
| Polarity | N-CHANNEL |
| Fall Time | 8.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 7.68nF |
| Power Dissipation | 125W |
| Number of Channels | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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