FDMS86520L
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Краткое описание:
N-Ch MOSFET 60V 22A 8.2mR TO-220-3
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 22A continuous drain current. Offers low 8.2mΩ drain-source resistance at a nominal 1.8V gate-source voltage. Designed for surface mount applications with a TO-220-3 package, it operates within a -55°C to 150°C temperature range and supports 69W power dissipation. Key switching characteristics include a 15ns turn-on delay and 3.4ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 1.05mm |
| Length | 5mm |
| Series | UniFET-II™ |
| Weight | 0.074g |
| Polarity | N-CHANNEL |
| Fall Time | 3.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.2mR |
| Nominal Vgs | 1.8V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.615nF |
| Power Dissipation | 69W |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 69W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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