FDN304PZ

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FDN304PZ - Onsemi
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Краткое описание: P-CH MOSFET 20V 2.4A 52mR SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel MOSFET, 20V Drain-Source Voltage, 2.4A Continuous Drain Current. Features 52mΩ Max Drain-Source On Resistance and 8V Gate-Source Voltage. Operates within -55°C to 150°C temperature range with 500mW power dissipation. Surface mountable in a 3-pin SOT-23 package, supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 0.94mm
Length 2.92mm
Series PowerTrench®
Weight 0.03g
Polarity P-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 52mR
Nominal Vgs -800mV
Termination SMD/SMT
JESD-30 Code R-PDSO-G3
Package/Case TO-236-3
Package Shape Rectangular
Surface Mount Yes
Terminal Form Gull Wing
Current Rating -2.4A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Compliant Yes
Terminal Finish Tin
DC Rated Voltage -20V
Package Quantity 3000
Input Capacitance 1.31nF
Power Dissipation 500mW
Terminal Position DUAL
Threshold Voltage -800mV
Number of Elements 1
Turn-On Delay Time 15ns
Dual Supply Voltage -20V
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 500mW
Package Body Material Plastic
Transistor Application SWITCHING
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 52mR
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.4A
Peak Reflow Temperature (Cel) 260°C
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 52MR
Drain to Source Breakdown Voltage -20V

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