FDN337N
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Краткое описание:
N-CH MOSFET 30V 2.2A 65mR SOT-23
Дополнительная информация
N-Channel MOSFET, 30V Drain-Source Voltage, 2.2A Continuous Drain Current. Features 65mΩ Max Drain-Source On Resistance and 700mV Threshold Voltage. Operates with 8V Gate-Source Voltage, offering 4ns Turn-On Delay and 17ns Turn-Off Delay. Packaged in a 3-pin SOT-23 (TO-236-3) for surface mounting, with a maximum power dissipation of 500mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 0.94mm |
| Length | 2.92mm |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | 700mV |
| Termination | SMD/SMT |
| Package/Case | TO-236-3 |
| Current Rating | 2.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 300pF |
| Power Dissipation | 500mW |
| Threshold Voltage | 700mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 4ns |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
| Drain to Source Breakdown Voltage | 30V |
