FDN338P
Производится
Увеличить
Краткое описание:
P-Channel JFET -20V, -1.6A, 115mR, TO-236-3, SM
Дополнительная информация
P-Channel MOSFET, single element configuration, designed for surface mount applications. Features a -20V drain-source breakdown voltage and a continuous drain current of 1.6A. Offers a low drain-source on-resistance of 115mΩ at a nominal Vgs of -800mV. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 500mW. Packaged in a TO-236-3 (SOT-23) case, supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.22mm |
| Series | PowerTrench® |
| Weight | 0.03g |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 115mR |
| Nominal Vgs | -800mV |
| Package/Case | TO-236-3 |
| Current Rating | -1.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 451pF |
| Power Dissipation | 500mW |
| Threshold Voltage | -800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 115mR |
| Drain to Source Breakdown Voltage | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
