FDN357N
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Краткое описание:
N-Channel MOSFET, 30V, 1.9A, 60mΩ, SOT-23, Tape & Reel
Дополнительная информация
N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for switching applications. Features a 30V Drain to Source Breakdown Voltage and a continuous drain current of 1.9A. Offers a low Drain-source On Resistance of 60mR at a nominal Vgs of 1.6V. Packaged in a SOT-23 surface mount case, this component boasts a 500mW power dissipation and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 5ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 0.94mm |
| Length | 2.92mm |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | 1.6V |
| Termination | SMD/SMT |
| JESD-30 Code | R-PDSO-G3 |
| Package/Case | SOT-23 |
| Package Shape | Rectangular |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Current Rating | 1.9A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Terminal Finish | Tin |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 235pF |
| Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Threshold Voltage | 1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 500mW |
| Package Body Material | Plastic |
| Transistor Application | SWITCHING |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 81mR |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Peak Reflow Temperature (Cel) | 260°C |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60MR |
| Drain to Source Breakdown Voltage | 30V |
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