FDN359AN

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FDN359AN - Onsemi
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Краткое описание: N-Ch MOSFET, 30V, 2.7A, 46mΩ, SOT-23, Logic Level
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Logic Level MOSFET, 30V Vds, 2.7A Continuous Drain Current. Features 46mΩ maximum drain-source on-resistance at nominal 1.6V gate-source voltage. Surface mount SOT-23 package with 500mW power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 6ns turn-on delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 0.94mm
Length 2.92mm
Series PowerTrench®
Weight 0.03g
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 46mR
Nominal Vgs 1.6V
Termination SMD/SMT
Package/Case SOT-23
Current Rating 2.7A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 3000
Input Capacitance 480pF
Power Dissipation 500mW
Threshold Voltage 1.6V
Number of Elements 1
Turn-On Delay Time 6ns
Dual Supply Voltage 30V
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 500mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 37mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.7A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 46mR
Drain to Source Breakdown Voltage 30V

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